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| EIA1111-2 UPDATED 02/17/2006 11.0-11.5 GHz 2-Watt Internally Matched Power FET .060 MIN. Excelics EIA1111-2 .060 MIN. FEATURES * * * * * * 11.0- 11.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +34.0 dBm Output Power at 1dB Compression 11.0 dB Power Gain at 1dB Compression 32% Power Added Efficiency Hermetic Metal Flange Package .650.008 .512 GATE .319 DRAIN YYWW SN .094 .382 .022 .04 .004 .070 .008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 11.0-11.5GHz VDS = 8 V, IDSQ 800mA Gain at 1dB Compression f = 11.0-11.5GHz VDS = 8 V, IDSQ 800mA Gain Flatness f = 11.0-11.5GHz VDS = 8 V, IDSQ 800mA Power Added Efficiency at 1dB Compression f = 11.0-11.5GHz VDS = 8 V, IDSQ 800mA Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 33.0 10.0 TYP 34.0 11.0 MAX UNITS dBm dB 0.6 32 900 1400 -1.0 10 1100 1800 -2.5 11 o dB % mA mA V C/W f = 11.0-11.5GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 14 mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12 -5 21.6mA -3.6mA 32.5dBm 175 C o -65 to +175 C o CONTINUOUS2 8V -3V 7.2mA -1.2mA @ 3dB Compression 175 oC -65 to +175 oC 13W Vds Vgs Igsf Igsr Pin Tch Tstg Pt 13W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised February 2006 |
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